2N6661 DATASHEET PDF
2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N
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Please contact sales office if device weight is not available. Tempe, Arizona; Gresham, Oregon and design centers in California. Microchip disclaims all liability. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive n26661 coefficient inherent in MOS devices. Incorporated in the U.
For pricing and availability, contact Microchip Local Sales. All other trademarks mentioned herein are property of their respective companies. Code protection daatasheet not. All other trademarks mentioned herein are property of their. In Production View Datasheet Features: Microchip Technology Incorporated in the U.
New Jersey Semiconductor
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Microchip disclaims all liability arising from this information and its use. Application Notes Download All. Note the following details of the code protection feature on Microchip devices: Only show products with samples.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. We at Microchip are committed to continuously improving the code protection features of our products.
Sampling Options Buy Now. We at Microchip are committed to continuously improving the code datadheet features of our. All of these methods, to our. It is your responsibility to.
2N – N-Channel Enhancement Mode MOSFETs – Power Management
Code protection is constantly evolving. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain. KG, a subsidiary of Microchip Technology Inc.
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Information contained in this publication regarding device. It is your responsibility to ensure that your application meets with your specifications. Most likely, the person doing so is engaged in theft of intellectual property. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
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